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注意:仅列出部分参考文献,下载原文获取全部文献信息。Free electron behavior in InN: On the role of dislocations and surface electron accumulation
V. Darakchieva et al.
APPLIED PHYSICS LETTERS (2009)
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
Samantha C. Cruz et al.
JOURNAL OF CRYSTAL GROWTH (2009)
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
Ching-Lien Hsiao et al.
APPLIED PHYSICS LETTERS (2008)
Optical hall effect in hexagonal InN
T. Hofmann et al.
JOURNAL OF ELECTRONIC MATERIALS (2008)
Effect of MBE growth conditions on multiple electron transport in InN
Tamara B. Fehlberg et al.
JOURNAL OF ELECTRONIC MATERIALS (2008)
Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns
S. Lazic et al.
PHYSICAL REVIEW B (2007)
Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
P. D. C. King et al.
APPLIED PHYSICS LETTERS (2007)
Effects of surface states on electrical characteristics of InN and In1-xGaxN
J. W. L. Yim et al.
PHYSICAL REVIEW B (2007)
Anisotropic strain and phonon deformation potentials in GaN
V. Darakchieva et al.
PHYSICAL REVIEW B (2007)
Microscopic origins of surface states on nitride surfaces
Chris G. Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2007)
Reduced surface electron accumulation at InN films by ozone induced oxidation
V. Cimalla et al.
APPLIED PHYSICS LETTERS (2007)
Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy
Leyla Colakerol et al.
PHYSICAL REVIEW LETTERS (2006)
A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBE
Y. Kumagai et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2006)
Intrinsic electron accumulation at clean InN surfaces
I Mahboob et al.
PHYSICAL REVIEW LETTERS (2004)
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Infrared dielectric anisotropy and phonon modes of sapphire
M Schubert et al.
PHYSICAL REVIEW B (2000)