期刊
APPLIED PHYSICS LETTERS
卷 95, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3261731
关键词
accumulation layers; electron density; electron mobility; III-V semiconductors; indium compounds; semiconductor thin films; surface charging; wide band gap semiconductors
资金
- FCT Portugal [PTDC/FIS/100448/2008]
- VR Sweden [2005-5054]
- Fundação para a Ciência e a Tecnologia [PTDC/FIS/100448/2008] Funding Source: FCT
The free electron properties of nonpolar (1120)-oriented and semipolar (1011)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9x10(13) to 2.3x10(14) cm(-2) depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417-644 cm(2)/V s are determined and discussed in the light of electron confinement at the surface.
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