期刊
APPLIED PHYSICS LETTERS
卷 95, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3187534
关键词
conduction bands; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma materials processing; semiconductor epitaxial layers; semiconductor growth
资金
- Engineering and Physical Science Research Council (EPSRC) [EP/P503825/1]
- EPSRC [EP/G000190/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G000190/1] Funding Source: researchfish
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据