期刊
APPLIED PHYSICS LETTERS
卷 95, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3180494
关键词
electron spin polarisation; gallium arsenide; III-V semiconductors; magnetoelectronics; mesoscopic systems; spin Hall effect
资金
- NSF [DMR 0804199]
- U.S. DOE [DE-AC5206NA25396]
We propose a spintronic device to generate spin polarization in a mesoscopic region by purely electric means. We show that the spin Hall effect in combination with the stirring effect are sufficient to induce measurable spin polarization in a closed geometry. Our device structure does not require the application of magnetic fields, external radiation or ferromagnetic leads, and can be implemented in standard semiconducting materials.
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