Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 degrees C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at similar to 3.0 eV (415 nm) and the strong green-yellow band at similar to 2.2 eV (560 nm). Two weak bands including the ultraviolet band at similar to 3.8 eV and the near infrared band at similar to 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.