期刊
APPLIED PHYSICS LETTERS
卷 94, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3064130
关键词
gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; photodetectors; p-i-n photodiodes; semiconductor epitaxial layers; sputter deposition; wide band gap semiconductors; zinc compounds
资金
- National Science Council [NSC 96-2112-M-006-013-MY3, NSC 96-2622-E-218-018-CC3]
In this study, indium tin oxide (ITO) or ITO/ZnO films, which were prepared by magnetron sputtering, were deposited onto p-GaN epitaxial films to form ultraviolet photodetectors (PDs). The ITO/ZnO/p-GaN heterojunction PDs behave like the p-i-n photodiodes, which characteristically exhibit low dark current, as opposed to the ITO/p-GaN PDs, which exhibit a marked bias-dependent dark current. The zero-bias rejection ratio can be improved up to 4x10(5) due to a further reduction in the dark current compared to the ITO/p-GaN PDs. When the incident wavelength is 360 nm, the ITO/ZnO/p-GaN heterojunction PD exhibits a zero-bias photocurrent/dark current ratio and a responsivity of approximately 8x10(4) and 0.015 A/W, respectively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据