期刊
APPLIED PHYSICS LETTERS
卷 94, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3077174
关键词
enhanced magnetoresistance; magnetic domain walls; micromagnetics; nanowires
The anisotropic magnetoresistance (AMR) of individual magnetic domain walls in planar nanowires has been systematically investigated as a function of the micromagnetic wall structure, width, and thickness of the nanowire. Experimentally derived thickness dependence of both the thin film resistivity and the anisotropic magnetoresistance were incorporated into the calculations. We found that the AMR value can be used to identify the wall structure and that the wall resistance is sensitive to wire width for widths less than 300 nm. Furthermore, in comparison with the detailed analysis here, a previous simplified domain wall model significantly underestimates domain wall resistance in narrower wires.
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