期刊
APPLIED PHYSICS LETTERS
卷 94, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3159473
关键词
conduction bands; current density; gallium compounds; III-V semiconductors; lanthanum compounds; leakage currents; MOSFET; silicon compounds; valence bands; wide band gap semiconductors; X-ray photoelectron spectra
The band alignments of (La2O3)(0.5)(SiO2)(0.5)(LSO)/GaN and LSO/SiO2/GaN gate dielectric stacks were investigated comparatively by using x-ray photoelectron spectroscopy. The valence band offsets for LSO/GaN stack and LSO/SiO2/GaN stack are 0.88 and 1.69 eV, respectively, while the corresponding conduction band offsets are found to be 1.40 and 1.83 eV, respectively. Measurements of the leakage current density as function of temperature revealed that the LSO/SiO2/GaN stack has much lower leakage current density than that of the LSO/GaN stack, especially at high temperature. It is concluded that the presence of a SiO2 buffer layer increases band offsets and reduces the leakage current density effectively.
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