期刊
APPLIED PHYSICS LETTERS
卷 95, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3266826
关键词
gallium compounds; Hall effect; III-V semiconductors; iron; magnetisation; metallic thin films
资金
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0057687]
- Seoul RDB Program [ST090777]
- National Science Foundation [DMR06-03762]
We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.
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