期刊
APPLIED PHYSICS LETTERS
卷 95, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3264970
关键词
carbon nanotubes; flexible electronics; silicon compounds; thin film transistors
资金
- National Science Council, Taiwan [NSC-95-2221-E-007-062-MY3]
The fabrication of transparent and flexible thin film transistors (TFTs), using single-walled carbon nanotube (SWCNT) networks as bottom gates and conducting channels and polymethylmethacrylate (PMMA) as an insulating layer, by the direct transfer method is demonstrated. The fabricated SWCNT-TFTs exhibited a mobility of 23.4 cm(2)/V s and an ON/OFF current ratio of similar to 10(3). A minor decrease of similar to 7% on the performance of the SWCNT-TFTs after bending to a radius of curvature of similar to 6 mm was observed. The differences in performance of the devices fabricated with SWCNTs on SiO2/Si and those prepared by transferring SWCNTs onto a polycarbonate substrate are also discussed.
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