期刊
APPLIED PHYSICS LETTERS
卷 94, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3103555
关键词
circuit reliability; electromigration; germanium compounds; random-access storage; solid electrolytes
We report on the low resistance state (LRS) stability analysis of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells under elevated temperature and bias current stress conditions. The activation energy was found to be about 1.02 eV, which is comparable to that of an electromigration-induced failure process. Experimental results also show that there is trade-off between the LRS stability and the thickness of Ge0.3Se0.7 layer.
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