期刊
APPLIED PHYSICS LETTERS
卷 94, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3105983
关键词
carrier mobility; cryogenic electronics; crystallisation; elemental semiconductors; field effect transistors; ink jet printing; nickel; silicon; thin film transistors
资金
- MEST/KOSEF [R11-2005-048-00000-0, R0A-2005-000-10011-0]
- MKE
- Korea Government (MEST) [R01-2008-000-11994-0, KRF-2008-313-D00597]
- National Research Foundation of Korea [R0A-2005-000-10011-0, R01-2008-000-11994-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.
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