4.6 Article

Acoustoelectric luminescence from a field-effect n-i-p lateral junction

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 12, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3106108

关键词

acousto-optical effects; aluminium compounds; cryptography; electroluminescence; gallium arsenide; III-V semiconductors; light emitting diodes; p-n junctions; semiconductor quantum wells; surface acoustic waves; transducers

资金

  1. European Commission
  2. Fondazione Silvio Tronchetti Provera

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A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.

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