相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Native defect properties and p-type doping efficiency in group-IIA doped wurtzite AlN
Yong Zhang et al.
PHYSICAL REVIEW B (2008)
Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods
X. H. Ji et al.
APPLIED PHYSICS LETTERS (2007)
Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers
Y. P. Hsu et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2007)
Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers
Hideo Kawanishi et al.
APPLIED PHYSICS LETTERS (2006)
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
NATURE (2006)
Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate
F Schulze et al.
APPLIED PHYSICS LETTERS (2006)
Band-edge electroluminescence from N+-implanted bulk ZnO
HT Wang et al.
APPLIED PHYSICS LETTERS (2006)
250 nm AlGaN light-emitting diodes
V Adivarahan et al.
APPLIED PHYSICS LETTERS (2004)
Ultraviolet AlGaN multiple-quantum-well laser diodes
M Kneissl et al.
APPLIED PHYSICS LETTERS (2003)
High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy
K Jeganathan et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2002)