期刊
APPLIED PHYSICS LETTERS
卷 94, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3123814
关键词
conduction bands; III-V semiconductors; II-VI semiconductors; indium compounds; interface states; polarisation; semiconductor heterojunctions; valence bands; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds
资金
- 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
- Major State Basic Research Project of China [2006CB604907]
- National Science Foundation of China [60506002, 60776015]
The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the intrinsic valence band offset.
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