期刊
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
卷 73, 期 12, 页码 3239-3242出版社
PHYSICAL SOC JAPAN
DOI: 10.1143/JPSJ.73.3239
关键词
quantum dot; Fano effect; Kondo effect; density matrix renormalization group method; maximum entropy method; Pade approximation
The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model of a T-shaped quantum dot. The conductance as a function of gate voltage is generally characterized by the Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high- and low-temperature regions compared with the Kondo temperature T-K. It is characterized by two Fano asymmetric peaks at high temperatures and by the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the finite temperature density matrix renormalization group method (FT-DMRG).
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