Theory of Fano-Kondo effect of transport properties through quantum dots

The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model of a T-shaped quantum dot. The conductance as a function of gate voltage is generally characterized by the Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high- and low-temperature regions compared with the Kondo temperature T-K. It is characterized by two Fano asymmetric peaks at high temperatures and by the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the finite temperature density matrix renormalization group method (FT-DMRG).