期刊
APPLIED PHYSICS LETTERS
卷 95, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3243461
关键词
-
资金
- Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen)
The laser assisted atom probe has been proposed as a metrology tool for next generation semiconductor technologies requiring subnanometer depth resolution. In order to support its routine application, we carried out a quantitative assessment of the performance of the atom probe on semiconductor stacks. We analyzed a silicon, silicon-germanium multilayer-structure with atom-probe tomography (APT), secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM), and high-resolution x-ray diffraction (HRXRD). We demonstrate that APT outperforms SIMS by a factor of 3 in terms of depth-resolution providing a decay length of 0.2-0.6 nm/decade whereas the compositions and layer thicknesses are in close agreement with SIMS, HRXRD, and TEM. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3243461]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据