期刊
APPLIED PHYSICS LETTERS
卷 94, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3110964
关键词
electro-optical effects; elemental semiconductors; nanowires; Raman spectra; silicon; stress analysis
资金
- NEDO
- METI
We show both theoretically and experimentally that at the 364 nm excitation wavelength, the Raman signal is strongly enhanced within a local (< 20 nm wide) area at the Si stripe edge when both incident and scattered lights are polarized parallel to the stripe. This enhancement effect results from a high concentration of the light electric field at the stripe edge and allows single nanowire Raman measurement as well as local stress detection at the stripe edges in Si device structures.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据