期刊
APPLIED PHYSICS LETTERS
卷 95, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3202409
关键词
dislocation density; dislocation loops; gallium compounds; III-V semiconductors; indium compounds; photoconductivity; photoluminescence; semiconductor thin films; spectral line intensity; X-ray diffraction
We report structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness. The photoluminescence intensity for the samples was observed to increase with thickness up to 200 nm and decrease for higher thicknesses, a result attributed to creation of dislocation loops within the epilayer. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN solar cells, with controlled types and dislocation densities in the InGaN epilayers, a key requirement for realizing high photocurrent generation in InGaN.
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