期刊
APPLIED PHYSICS LETTERS
卷 95, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3176480
关键词
carrier mobility; fullerene devices; thin film transistors
资金
- Special Coordination Funds
The current-gain cutoff frequency for bottom contact n-channel C-60 thin-film transistors (TFTs) with channel lengths of 2-10 mu m has been investigated. Patterned gate electrodes were adopted to reduce parasitic capacitance of the TFTs. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The estimated cutoff frequency increases consistently with reducing channel length. A maximum cutoff frequency of 20.0 MHz was obtained from a C-60 TFT with a channel length of 2 mu m and a saturation mobility of 1.11 cm(2)/V s.
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