期刊
APPLIED PHYSICS LETTERS
卷 94, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3090489
关键词
charge injection; electrodes; electron mobility; fullerene devices; fullerenes; thin film transistors
资金
- Special Coordination Funds for Promoting Science and Technology
Bottom-contact n-channel C-60 thin-film transistors (TFTs) with drain/source electrodes modified by benzenethiol derivatives have been fabricated to investigate the influence of the modification on the transistor characteristics. Modification using methylbenzenethiol, aminobenzenethiol, and (dimethylamino)benzenethiol having electron-donating groups causes threshold voltages to shift to low voltages. In addition, the modification provides no significant decrease in saturation mobilities. A C-60 TFT with (dimethylamino)benzenethiol-modified electrodes has a low threshold voltage of 5.1 V as compared to that of 16.8 V for a TFT with nonmodified electrodes. The threshold-voltage shift is probably because the modification reduces electron-injection barrier height and improves electron injection into organic semiconductors.
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