期刊
APPLIED PHYSICS LETTERS
卷 94, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3089840
关键词
electronic structure; gallium compounds; III-V semiconductors; infrared spectra; luminescence; optical pumping; semiconductor quantum wells; wide band gap semiconductors
资金
- National Science Foundation [ECS-0622102]
Optically pumped pulsed emission of short-wave infrared radiation based on intersubband transitions in GaN/AlN quantum wells is demonstrated. Nanosecond-scale pump pulses are used to resonantly excite electrons from the ground states to the second-excited subbands, followed by radiative relaxation into the first-excited subbands. The measured room-temperature output spectra are peaked near 2 mu m with integrated powers of a few hundred nanowatts. The intersubband origin of the measured luminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence, as well as simulations of the quantum well subband structure.
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