期刊
APPLIED PHYSICS LETTERS
卷 94, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3068754
关键词
MIM structures; multilayers; platinum; rectification; rectifiers; Schottky barriers; titanium compounds; vacancies (crystal)
The switchable rectifier built with Pt/TiOx/Pt was proposed and the reproducible rectification switching was demonstrated. The rectification switching is considered to be originated from the electrical control of the oxygen vacancy concentration at the interfaces between Pt and TiOx and resultant variations in the Schottky barrier height. The electrode area dependence of the current conduction after the rectification switching revealed that this switching occurs at the almost entire interface region. The reproducible switching in the Pt/TiOx/Pt rectifier is demonstrated by changing the polarity of the pulse voltage, evidencing the excellent functionality of the engineered metal/oxide interface.
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