期刊
APPLIED PHYSICS LETTERS
卷 94, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3083549
关键词
hopping conduction; localised states; organic field effect transistors; organic semiconductors; tunnelling
资金
- HKUST [RPC07/08.SC03, RGC 603007]
- National NSF of China [10604037, DMR-0602870]
- National Basic Research Program of China [2007CB925001]
Variable-range hopping is usually the main electron transport mechanism of an organic semiconductor at low temperature. For an organic field-effect transistor at low temperature and under both high source-drain bias and high gate voltage, it is argued that multistep tunneling (MUST) can dominate charge transport. The MUST occurs through the assistance of randomly distributed localized states. The conductivity depends exponentially on the inverse of the square-root of electric field. This result explains well the recent experimental observation [A. S. Dhoot , Phys. Rev. Lett. 96, 246403 (2006)].
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