期刊
APPLIED PHYSICS LETTERS
卷 94, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3058694
关键词
carrier density; conducting polymers; electrochemical electrodes; gels; ionisation potential; organic semiconductors; semiconductor-insulator boundaries; silver; thin film transistors
资金
- NSF Materials Research Science and Engineering Center Program [DMR-0819885]
- Sundahl Fellowship at the University of Minnesota
We report direct measurement of the electrochemical potential at organic semiconductor/gate dielectric interfaces in printed polymer transistors employing a gel electrolyte as the gate insulator. An oxidized silver wire reference electrode was embedded into the gel electrolyte, and its potential relative to the grounded source contact was measured simultaneously with the transistor transfer characteristics. The referenced turn-on voltages of transistors based on three common polymer semiconductors [(poly-3-hexylthiophene, poly(3,3(')-didodecylquaterthiophene), and poly(9,9(')-dioctylfluorene-co-bithiophene)] were found to correlate with the reported highest occupied molecular orbital levels (ionization potentials) for these materials. Further, analysis of the transfer characteristics revealed a negative differential transconductance regime at high gate-induced carrier densities (similar to 10(15) cm(-2)), which we attribute to a combination of band filling and a mobility lowering effect.
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