4.6 Article

Single electron charging in deterministically positioned InAs/InP quantum dots

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 1, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3063048

关键词

electrical contacts; III-V semiconductors; indium compounds; photoluminescence; semiconductor quantum dots; spectral line shift; Stark effect

资金

  1. Canadian Institute for Photonic Innovations
  2. QuantumWorks
  3. Natural Sciences and Engineering Research Council

向作者/读者索取更多资源

We demonstrate precise control of electron charging within a single deterministically positioned InAs/InP quantum dot emitting in the telecommunications band around 1500 nm. Photolumine-scence emission as a function of vertical electric field is used to monitor the electron number within the dot. From Stark shift spectroscopy, we extract strength and orientation for the built-in dipole moment that suggests a uniform InAs dot composition and a configuration in which the electron lies above the hole at zero electric field. The scalable gating technology we employ to electrically contact individual prepositioned quantum dots promises arrays of initialized single spins that can be used for fiber-based quantum information applications.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据