期刊
APPLIED PHYSICS LETTERS
卷 95, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3263942
关键词
chromium; contact resistance; epitaxial layers; gold; graphene; insulated gate field effect transistors; multilayers; polymers; Raman spectra; rapid thermal annealing
资金
- U. S. Department of Energy
- Division of Materials Sciences [DEFG02-07ER46471]
- Center for Microanalysis of Materials [DE-FG02-07ER46453]
- University of Illinois at Urbana-Champaign. S. U.
- Anandamahidol Foundation
This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 degrees C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of similar to 100 cm(2)/V-s, and negligible influence of resistance at the contacts.
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