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注意:仅列出部分参考文献,下载原文获取全部文献信息。Electron effective mass and Si-donor binding energy in GaAs1-xNx probed by a high magnetic field
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Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure
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Valence-band anticrossing in mismatched III-V semiconductor alloys
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Nitrogen-induced perturbation of the valence band states in GaP1-xNx alloys
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Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx
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Similar and dissimilar aspects of III-V semiconductors containing Bi versus N
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T Taliercio et al.
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Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures -: art. no. 233304
GB von Högersthal et al.
PHYSICAL REVIEW B (2003)
Molecular beam epitaxy growth of GaAs1-xBix
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Alloy states in dilute GaAs1-xNx alloys (x<1%)
XD Luo et al.
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Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy
J Yoshida et al.
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Reduced temperature dependence of the band gap in GaAs1-yNy investigated with photoluminescence -: art. no. 235325
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Theory of electronic structure evolution in GaAsN and GaPN alloys
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Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
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From N isoelectronic impurities to N-induced bands in the GaNxAs1-x alloy
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