Resistive switching memory effect of ZrO2 films with Zr+ implanted

The Au/Cr/Zr+-implanted-ZrO2/n(+)-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (R-ratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction. (C) 2008 American Institute of Physics.