期刊
APPLIED PHYSICS LETTERS
卷 93, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2988497
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资金
- United States Department of Energy [DE-AC36-99-GO10337]
A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51In.49P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In.04Ga.96As middle junction, and a metamorphic 0.89 eV In.37Ga.63As bottom junction. The two metamorphic junctions contained approximately 1 x 10(5) cm(-2) and 2-3 x 10(6) cm(-2) threading dislocations, respectively. (C) 2008 American Institute of Physics.
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