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Schottky-quantum dot photovoltaics for efficient infrared power conversion

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APPLIED PHYSICS LETTERS
卷 92, 期 15, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2912340

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Planar Schottky photovoltaic devices were prepared from solution-processed PbS nanocrystal quantum dot films with aluminum and indium tin oxide contacts. These devices exhibited up to 4.2% infrared power conversion efficiency, which is a threefold improvement over previous results. Solar power conversion efficiency reached 1.8%. The simple, optimized architecture allows for direct implementation in multijunction photovoltaic device configurations. (C) 2008 American Institute of Physics.

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