期刊
APPLIED PHYSICS LETTERS
卷 93, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2973208
关键词
-
资金
- National Institute of Standards and Technology, Gaithersburg, Maryland
This work computationally investigates the electromechanical properties of hydrogen passivated silicon nanowires under uniaxial tensile strain. It has been observed that bandgap changes can be as large as 60 and 100 meV per 1% axial strain for [100] and [110] nanowires, respectively. This rate of change in the bandgap is independent of nanowire size and depends only on the growth direction. More importantly, the nature of the bandgap can reversibly change from indirect to direct as a function of strain. It is also observed that for larger diameter nanowires, the indirect-to-direct transition occurs at smaller compressive strain. (C) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据