期刊
APPLIED PHYSICS LETTERS
卷 93, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2977865
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资金
- Korean government (MOST) [R01-2007-000-21013-0]
- National Research Foundation of Korea [R01-2007-000-21013-0, 과06B1613] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress results in a positive shift in the threshold voltage, while the transfer curve hardly moves when negative stress is induced. The time evolution of threshold voltage is described by the stretched-exponential equation, and the shift is attributed to the electron injection from the channel into interface/dielectric traps. The stress amplitudes and stress temperatures are considered as important factors in threshold voltage instabilities, and the stretched-exponential equation is well fitted in various bias temperature stress conditions. (c) 2008 American Institute of Physics.
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