Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

The dependence of the relationship between the reset current I(reset) and the compliance current I(comp) (I(reset)-I(comp) characteristic) of a Pt/NiO(x)/Pt structure on the parasitic capacitance between the Pt/NiO(x)/Pt structure and a current limiter C was measured for I(comp)< 1 mA. It was clarified that C deviated the I(reset)-I(comp) characteristic from the ideal linear relationship expected for C=0 and I(reset) saturated at higher I(comp) for larger C. This is attributed to a transient current flowing through C when the forming or set transitions occurred. The relationship of I(reset)approximate to I(comp) was maintained down to I(comp)=150 mu A in the 1T1R cell with very small C. (C) 2008 American Institute of Physics.