期刊
APPLIED PHYSICS LETTERS
卷 93, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3052046
关键词
ab initio calculations; amorphous semiconductors; annealing; antimony compounds; germanium compounds; molecular dynamics method; nitrogen; phase change materials; semiconductor thin films
资金
- Nature Science Foundation of Fujian Province of China [2008J0166]
- Xiamen University [X071I4]
Nitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge2Sb2Te5, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the doped N in amorphous Ge2Sb2Te5 coexist as Ge(Sb, Te)N complex and N-2, and high density of the film produces more N-2. Furthermore, both Ge(Sb, Te)N complex and N-2 are stable upon annealing at 600 K.
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