期刊
APPLIED PHYSICS LETTERS
卷 93, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3003877
关键词
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资金
- Key Project of National Natural Science Foundation of China [50532050]
- 973 program [2006CB604906, 2008CB317105]
- Innovation Project of Chinese Academy of Sciences
- National Natural Science Foundation of China [60506014, 10674133, 60776011]
Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode characteristics with rectification ratio of above 1.6x10(2) at 4 V in the dark. Experiments demonstrated that the diode could be used to detect either visible or ultraviolet light by easily controlling the polarity of the voltage applied on the heterojunction. The spectral response of the device will be discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003877].
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