Avoiding cryogenic cooling not only reduces the cost and weight but also simplifies the infrared detector system allowing widespread usage. Here an uncooled infrared detection using intravalence bands is reported. A set of three p-GaAs/Al(x)Ga(1-x)As multiple heterojunction detector structures were used to demonstrate the concept experimentally. A preliminary detector showed peak responsivity of 0.29 mA/W at 2.5 mu m at 300 K. The intravalence band approach can be used to cover various wavelength ranges by using different material systems giving rise to the possibilities of a dual band detector operating in atmospheric windows. (C) 2008 American Institute of Physics.
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