期刊
APPLIED PHYSICS LETTERS
卷 93, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3041639
关键词
boron compounds; crystal microstructure; electron energy loss spectra; III-V semiconductors; monolayers; sheet materials; transmission electron microscopy; wide band gap semiconductors
资金
- U. S. DOE [DE-AC02-98CH10886]
- Laboratory Directed Research and Development Fund of Brookhaven National Laboratory
We prepared mono- and few-layer hexagonal boron nitride sheets by a chemical-solution-derived method starting from single-crystalline hexagonal boron nitride. Using high-resolution transmission electron microscopy and electron-energy-loss spectrometry, we characterized the microstructure, composition, and near-edge fine structure of the boron nitride sheets. We conclude that the fringe contrast in the edge and the moire patterns are feasible criteria for determining the number of layers and their stacking orientation in the sheets. These criteria are also useful for other mono- and few-layer materials, such as graphene sheets.
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