4.6 Article

Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

期刊

APPLIED PHYSICS LETTERS
卷 92, 期 2, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.2831668

关键词

-

向作者/读者索取更多资源

Analysis of internal photoemission and photoconductivity in Ge/thermal germanium oxide/high-dielectric constant oxide (HfO2,Al2O3) structures reveals that the bandgap of the germanium oxide interlayer is significantly lower (4.3 +/- 0.2 eV) than that of stiochiometric GeO2 (5.4-5.9 eV). As a result, the conduction and valence band offsets at the interface appear to be insufficient to block electron and hole injection leading to significant charge trapping in the GeOx/high-kappa oxide stack. Formation of a hydroxyl-rich Ge oxide phase is suggested to be responsible for the modification of the oxide properties. (c) 2008 American Institute of Physics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据