A theoretical model for describing the bias-dependent transient behavior of dark current in multilayer (n-i-p) amorphous selenium (a-Se) detectors has been developed. The transient dark currents in these detectors are measured and are compared to the proposed dark current model. It has been found that the dark current is mainly controlled by Schottky emission of holes from the metal/a-Se contact. The initial and steady state dark currents are mainly controlled by the barrier height and the trap centers in the n layer, respectively. (c) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据