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Investigation of Ga oxide films directly grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser
CT Lee et al.
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BP Gila et al.
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CT Lee et al.
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CT Lee et al.
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High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes
JY Kim et al.
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AlGaN/GaN HEMTs on (111) silicon substrates
P Javorka et al.
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Application of GaN-based heterojunction FETs for advanced wireless communication
Y Ohno et al.
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Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN
CT Lee et al.
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