High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method

The AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors, which are fabricated using gate insulators directly grown by photoelectrochemical oxidation method, were studied for rf and low frequency noise applications. The drain-source current in saturation (I(DSS)) and maximum extrinsic transconductance g(m(max)) are 580 mA/mm and 76.72 mS/mm, respectively. The unity gain cutoff frequency (f(T)) and maximum frequency of oscillation (f(max)) are 5.6 and 10.6 GHz, respectively. Furthermore, the low frequency noise in saturation region is measured and fitted well by 1/f law up to 10 kHz. (c) 2008 American Institute of Physics.