Growth of InAs/Sb: GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3 μm band

We report on the growth of self-assembled InAs/Sb:GaAs quantum dots (QDs) on silicon substrate by antimony-mediated metal organic chemical vapor deposition. We obtained arrays of InAs/Sb:GaAs/Si QD chains along [0-11], with density as high as 7x10(10) cm(-2) and low coalescence. These QDs yield emission in the 1.3 mu m band. The temperature dependence of the photoluminescence intensity indicates the good optical quality of the grown QDs. Together, these results are promising for the fabrication of InAs/GaAs QD laser on silicon substrate. (c) 2008 American Institute of Physics.