期刊
APPLIED PHYSICS LETTERS
卷 93, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3040683
关键词
dislocations; etching; gallium arsenide; III-V semiconductors; indium compounds; ion beam assisted deposition; nanolithography; photoluminescence; plasma materials processing; semiconductor quantum dots; semiconductor quantum wells; spectral line shift
资金
- Raytheon Co.
- (U.S.) Air Force Office of Scientific Research [FA9550-5-1-6314]
We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by combining nanosphere lithography and bromine ion-beam-assisted etching on a single InGaAs/GaAs quantum well. A wide range of lateral dot sizes was achieved from an oxygen plasma nanosphere resizing process. The increased lateral confinement of carriers in the dots results in low temperature photoluminescence blueshifts from 0.5 to 11 meV. Additional quantization was achieved using a selective wet-etch process. Our model suggests the presence of a 70 nm dead layer in the outer InGaAs radial edge, which we believe to be a result of defects and dislocations introduced during the dry-etch process.
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