期刊
APPLIED PHYSICS LETTERS
卷 93, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3058769
关键词
electrical conductivity; epitaxial layers; internal stresses; metal-insulator transition; strongly correlated electron systems; vanadium compounds; X-ray diffraction
资金
- DARPA through ARO [W911NF-08-1-0283]
In this letter, we reported a very large anisotropy in dc conductivity of epitaxial VO2 thin films deposited on a (011) TiO2 substrate. The VO2 film grew epitaxially on TiO2 and x-ray diffraction showed that VO2 had the tetragonal symmetry due to the substrate clamping effect at room temperature. There was a compressive strain of -1.2% along the c-axis of the rutile VO2. We observed a very strong angular dependence of in-plane dc conductivity. We calculated that sigma(1)/sigma(3)similar to 5.14, which was anomalously large. We attributed the drastic increase to the compressive strain along the c-axis of the rutile VO2 due to substrate clamping. This very large anisotropy disappeared above the metal-insulator transition.
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