Structural investigation of GaAs1-xBix/GaAs multiquantum wells

GaAs(1-x)Bi(x)/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has been confirmed by cross-sectional transmission microscopy and high-resolution x-ray diffraction measurements. Photoluminescence has been observed from GaAs(1-x)Bi(x)/GaAs MQW at room temperature. The MQW structures have been confirmed to be thermally stable even after annealing up to 800 C, although they need to be grown at a low temperature (350-400 C degrees) for Bi incorporation. (C) 2008 American Institute of Physics.