Erbium-doped silicon-rich nitride/silicon superlattice structures were fabricated by direct magnetron cosputtering deposition on Si substrates. Rapid thermal annealing resulted in the nucleation of small amorphous Si clusters, which efficiently sensitize 1.54 mu m emission via a nanosecond-fast nonresonant energy transfer process, providing an alternative route toward the fabrication of Si-compatible devices based on Er sensitization. (C) 2008 American Institute of Physics.
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