期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 40, 期 12, 页码 1695-1699出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2004.837788
关键词
avalanche photodiodes; photodetectors; ultraviolet
GaP avalanche photodiodes, with thin device layers have been processed, utilizing both p-i-n and recessed window p-i-n structures, as well as a Schottky structure. The results showed low dark currents, good quantum efficiency (QE), and high gains up to 10(3), with good uniformity across the wafer. The peak QE at 440 nm indicated F-valley absorption, rather than band-edge absorption. The recess window photodiodes exhibited enhanced UV detection as a result of reduced absorption and recombination in the undepleted p-layer. Additionally, the Schottky structure demonstrated potential for further enhanced UV detection, by employing a thin semitransparent contact.
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