Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films

Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6 at. % have been deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (P-max) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum P-max(similar to 0.54 C/m(2) at similar to 60MV/m) as well as a maximum W (similar to 14.9 J/cc at similar to 60MV/m) have been achieved on 5% La modification. Both P-max and W have been found to be strongly dependent on La-induced crystallographic orientations. (c) 2008 American Institute of Physics.