期刊
APPLIED PHYSICS LETTERS
卷 93, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3028639
关键词
atomic force microscopy; conduction bands; doping profiles; Fermi level; gallium compounds; III-V semiconductors; MOCVD; ohmic contacts; semiconductor doping; semiconductor epitaxial layers; surface potential; surface states; valence bands; wide band gap semiconductors
资金
- French Ministry of Defense (DGA) [06.34.009]
n- and p-type GaN epitaxial layers grown by metal-organic chemical vapor deposition with different doping levels have been characterized by Kelvin probe force microscopy (KFM). To investigate the surface states of GaN beyond instrumental and environmental fluctuations, a KFM calibration procedure using a gold-plated Ohmic contact as a reference has been introduced, and the reproducibility of the KFM measurements has been evaluated. Results show that the Fermi level is pinned for n- and p-type GaN over the available doping ranges, and found 1.34 +/- 0.15 eV below the conduction band and 1.59 +/- 0.18 eV above the valence band, respectively.
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